论文标题
Pizoelectric Networks和FerroelectricMoiré超级晶格域中的二型WS $ _2 $/MOS $ _2 $和WSE $ _2 $/MOSE $ _2 $ BILAYERS
Piezoelectric networks and ferroelectric moiré superlattice domains in twistronic WS$_2$/MoS$_2$ and WSe$_2$/MoSe$_2$ bilayers
论文作者
论文摘要
Twistronic van der waals杂质为纳米材料的工程光电特性提供了令人兴奋的机会。在这里，我们使用多尺度建模来研究通过域结构的铁电化极化和压电电荷在twistronic WX $ _2 $/mox $ _2 $ bilayers（x = s，se）中，通过铁电极和压电电荷来研究捕获电荷载体和激子的捕获。 For almost aligned 2H-type bilayers, we find that holes and electrons are trapped in the opposite -- WMo and XX (tungsten over molybdenum {\it versus} overlaying chalcogens) -- corners of the honeycomb domain wall network, swapping their position at a twist angle $0.2^{\circ}$, with XX corners providing $30$\,meV deep traps适用于所有角度的层中激子。在3r型双层中，电子和孔都被困在三角形的“ 3R堆叠”域中，其中WX $ _2 $ _2 $ chalcogens设置为mox $ _2 $ _2 $钼还是mothcenums，其作用为$ 130 $ \，$ 130 $ \，用于twister $ \ ysean twists $ \ for Twists $ \ for Twists $ \ for Twists $ \ for Twistsim $ 1^for Twists $ 1^for twistm $ \ forthe $ \ forthe $ \\ for Twists $ \ for Twists $ 1^for Twister crockim $ 1^。域墙网络XX堆叠站点。
Twistronic van der Waals heterostrutures offer exciting opportunities for engineering optoelectronic properties of nanomaterials. Here, we use multiscale modeling to study trapping of charge carriers and excitons by ferroelectric polarisation and piezoelectric charges by domain structures in twistronic WX$_2$/MoX$_2$ bilayers (X=S,Se). For almost aligned 2H-type bilayers, we find that holes and electrons are trapped in the opposite -- WMo and XX (tungsten over molybdenum {\it versus} overlaying chalcogens) -- corners of the honeycomb domain wall network, swapping their position at a twist angle $0.2^{\circ}$, with XX corners providing $30$\,meV deep traps for the interlayer excitons for all angles. In 3R-type bilayers, both electrons and holes are trapped in triangular "3R stacking" domains, where WX$_2$ chalcogens set over MoX$_2$ molybdenums, which act as $130$\,meV deep quantum boxes for interlayer excitons for twist angles $\lesssim 1^{\circ}$, for larger angles shifting towards domain wall network XX stacking sites.
