论文标题
通过纳米层电容器中的电子场排放来创建库仑屏障
Coulomb barrier creation by means of electronic field emission in nanolayer capacitors
论文作者
论文摘要
纳米级介电膜的电容器能量损失的主要机制是泄漏电流。以Al-Al2O3-Al的示例，我们表明有两个主要贡献，即冷场排放效应和通过介电的跳转电导率。我们的主要发现是，高电场的应用〜0.6-0.7 GV/m，使电子穿透介电。如果温度足够低，则该电子将永久捕获在介电中。为了达到介电的强充电，电压需要足够高，因此从阴极从阴极进入介电的电场发射。如此强大的电荷介电层产生库仑屏障，并导致泄漏电流的抑制。因此，在电容器的介电纳米层被充电后，场发射和跳跃电导率都被抑制，而I-V曲线的磁滞消失了。在高达〜225 K的温度下观察到这种现象。鉴定库仑屏障现象甚至持续到室温，但目前尚不知道这种介电是否存在和/或可以设计。
The main mechanism of energy loss in capacitors with nanoscale dielectric films is leakage currents. Using the example of Al-Al2O3-Al, we show that there are two main contributions, namely the cold field emission effect and the hopping conductivity through the dielectric. Our main finding is that an application of a high electric field, ~0.6-0.7 GV/m, causes electrons to penetrate the dielectric. If the temperature is sufficiently low, such electrons become permanently trapped in the dielectric. To achieve a strong charging of the dielectric, the voltage needs to be high enough, so that a field emission occurs from the cathode into the dielectric. Such a strongly charged dielectric layer generates a Coulomb barrier and leads to a suppression of the leakage current. Thus, after the dielectric nanolayer of the capacitor is charged, the field emission and the hopping conductivity are both suppressed, and the hysteresis of the I-V curve disappears. The phenomenon is observed at temperatures up to ~225 K. It would be advantageous to identify insulators in which the phenomenon of the Coulomb barriers persists even up to the room temperature, but at this time it is not known whether such dielectrics exist and/or can be designed.
