论文标题
在未发行的硅基波导中，用于大型刺激的布里鲁因散射的垂直工程
Vertical engineering for large stimulated Brillouin scattering in unreleased silicon-based waveguides
论文作者
论文摘要
在基于硅的波导中，强大的声音相互作用通常需要释放硅芯，以避免机械泄漏到基础二氧化硅底物中。这使制造复杂化，限制了热化，降低了机械鲁棒性，并阻碍了单个芯片上的大面积机械设备。在这里，我们通过采用垂直光子语音工程来克服这一限制。具体而言，在硅引导芯和二氧化硅底物之间插入厚的氮化硅层有助于减少GHz频率的声子泄漏，从而在未发行的平台中可以大量的Brillouin增益值。对于不同配置，我们获得了Brillouin增益的值左右，大约300（WM）$^{ - 1} $，这可以通过在低温温度下的操作进一步增加。这些值应能够观察到CM尺度波导或更紧凑的环谐振器中与布里素相关的现象。这一发现可以为硅芯片上的大区域未发行的腔和波导光学机械铺平道路。
Strong acousto-optic interaction in silicon-based waveguides generally requires releasing of the silicon core to avoid mechanical leakage into the underlying silica substrate. This complicates fabrication, limits thermalization, reduces the mechanical robustness and hinders large area optomechanical devices on a single chip. Here, we overcome this limitation by employing vertical photonic-phononic engineering. Specifically, the insertion of a thick silicon nitride layer between the silicon guiding core and the silica substrate contributes to reduce GHz-frequencies phonon leakage enabling large values of the Brillouin gain in an unreleased platform. We get values of the Brillouin gain around 300 (Wm)$^{-1}$ for different configurations, which could be further increased by operation at cryogenic temperatures. These values should enable to observe Brillouin-related phenomena in cm-scale waveguides or in more compact ring resonators. This finding could pave the way towards large-area unreleased cavity and waveguide optomechanics on silicon chips.
