论文标题
用碳化硅综合量子光子学:挑战和前景
Integrated quantum photonics with silicon carbide: challenges and prospects
论文作者
论文摘要
可光化的固态自旋缺陷是使用其长相干基态歧管来存储和操纵量子信息的有希望的候选。单个缺陷可以使用光子 - 光子相互作用纠缠,从而提供通向大型量子光子网络的路径。量子计算协议对系统中可接受的光子损失进行了严格的限制。如果没有光子工程,这些低损失的要求将无法达到,但是如果与最先进的纳米光子技术相结合,则可以实现。但是,大多数托管自旋缺陷的材料都具有挑战性的处理:结果,量子光子设备的性能是其经典对应物的数量级。碳化硅(SIC)非常适合桥接经典的量子光子间隙,因为它具有有希望的光学可调性的旋转缺陷,并且可以将其处理到SIC-ON-ON-ON-PROUNSULATOR中,以进行可扩展的集成光子学。从这个角度来看,我们讨论了基于碳化硅固态旋转开发可扩展量子光子技术的最新进展,并讨论了当前的挑战和未来方向。
Optically-addressable solid-state spin defects are promising candidates for storing and manipulating quantum information using their long coherence ground state manifold; individual defects can be entangled using photon-photon interactions, offering a path toward large scale quantum photonic networks. Quantum computing protocols place strict limits on the acceptable photon losses in the system. These low-loss requirements cannot be achieved without photonic engineering, but are attainable if combined with state-of-the-art nanophotonic technologies. However, most materials that host spin defects are challenging to process: as a result, the performance of quantum photonic devices is orders of magnitude behind that of their classical counterparts. Silicon carbide (SiC) is well-suited to bridge the classical-quantum photonics gap, since it hosts promising optically-addressable spin defects and can be processed into SiC-on-insulator for scalable, integrated photonics. In this Perspective, we discuss recent progress toward the development of scalable quantum photonic technologies based on solid state spins in silicon carbide, and discuss current challenges and future directions.