论文标题
二维狄拉克材料中杂质状态的光学谷化状态
Optical valleytronics of impurity states in two-dimensional Dirac materials
论文作者
论文摘要
我们分析了从杂质状态到二维迪拉克材料的传统材料的光学转变的山谷选择规则，以MOS2的单层为例。我们采用了浅层杂质电位的分析模型，该模型定位了由纺纱波函数描述的电子，首先，考虑到布里群岛区域中存在两个山谷的系统本征态。然后，我们发现吸光度的光谱并计算由于杂质带跃迁而导致的光子拖盘电流，这是关于杂质dirac材料中杂质波段光学转变的山谷光学选择规则的一般结论。
We analyze the valley selection rules for optical transitions from impurity states to the conduction band in two-dimensional Dirac materials, taking a monolayer of MoS2 as an example. We employ the analytical model of a shallow impurity potential which localizes electrons described by a spinor wave function, and, first, find the system eigenstates taking into account the presence of two valleys in the Brillouin zone. Then, we find the spectrum of the absorbance and calculate the photon-drag electric current due to the impurity-band transitions, drawing the general conclusions regarding the valley optical selection rules for the impurity-band optical transitions in gapped Dirac materials.
