论文标题
上游模式和解毒剂毒石墨烯量子厅效应
Upstream modes and antidots poison graphene quantum Hall effect
论文作者
论文摘要
量子大厅的效应是拓扑保护的一个开创性示例,因为电荷载体通过禁止向后散射的一维边缘通道传播。石墨烯已成为一个杰出平台,以揭示此非凡属性的新方面。但是,在常规的大厅杆几何形状中,对石墨烯边缘通道的拓扑保护比在高移动性半导体中的稳健性更低。在这里,我们使用扫描门显微镜在本地尺度探索石墨烯量子厅制度。我们揭示了沿石墨烯边缘的解毒剂的有害影响,将反向散射介导向上游边缘通道,从而触发拓扑分解。结合模拟,我们的实验结果提供了对石墨烯量子厅通道脆弱性的进一步见解。反过来,这可能会减轻未来的发展,以精确操纵以各种类型的二维晶体托管的拓扑保护边缘通道。
The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to reveal new facets of this remarkable property. However, in conventional Hall bar geometries, topological protection of graphene edge channels is found regrettably less robust than in high mobility semi-conductors. Here, we explore graphene quantum Hall regime at the local scale, using a scanning gate microscope. We reveal the detrimental influence of antidots along the graphene edges, mediating backscattering towards upstream edge channels, hence triggering topological breakdown. Combined with simulations, our experimental results provide further insights into graphene quantum Hall channels vulnerability. In turn, this may ease future developments towards precise manipulation of topologically protected edge channels hosted in various types of two-dimensional crystals.