论文标题
硅中性镁的山谷 - 轨道态的热激活
Thermal activation of valley-orbit states of neutral magnesium in silicon
论文作者
论文摘要
间质镁在硅中充当中等深的双供体，相对容易通过扩散引入。与Chalcogen的双供体的情况不同，偶数谷轨道激发态的结合能1st $ _2 $和1SE仍然难以捉摸。在这里，我们报告了针对中性电荷物种的温度依赖性吸收测量值。我们的结果证明了从基态1SA到山谷 - 轨道状态的热激活，如从填充水平到奇数状态2p $ _0 $和2p $ _ {\ pm} $的过渡所观察到的。
Interstitial magnesium acts as a moderately deep double donor in silicon, and is relatively easily introduced by diffusion. Unlike the case of the chalcogen double donors, the binding energies of the even-parity valley-orbit excited states 1sT$_2$ and 1sE have remained elusive. Here we report on temperature dependence absorption measurements focusing on the neutral charge species. Our results demonstrate thermal activation from the ground state 1sA to the valley-orbit states, as observed by transitions from the thermally populated levels to the odd-parity states 2p$_0$ and 2p$_{\pm}$
