论文标题
与CMOS兼容氮化钛的等离子增强石墨烯光电探测器
Plasmon-enhanced graphene photodetector with CMOS-compatible titanium nitride
论文作者
论文摘要
石墨烯已成为用于片上光电探测器应用的超快光电材料。石墨烯的2D性质使其可与互补的金属氧化物半导体（CMOS）微电子和硅光子学相关，但石墨烯仅吸收$ \ sim $ \ sim $ 2.3％的光$ 2.3％。等离子金属可以增强石墨烯光电探测器的响应性，但可能会导致CMOS不合时宜的设备，具体取决于金属的选择。在这里，我们建议使用CMOS兼容的氮化钛（TIN）（SOI）平台上的CMOS兼容钛（SOI）平台上的等离子增强光热石墨烯检测器。设备性能通过其响应性，操作速度和噪声等效功率来量化。它的带宽超过100 $ \，$ GHz，并且在整个电信C波段中表现出几乎平坦的光响应。光电探测器的响应性高达1.4 $ \，$ a/w（1.1 $ \，$ a/w外部），以3.5 $ \，μ$ m的超紧凑型长度为3.5 $ \，这是基于石墨烯的waveguide phaveguide photododector报告的最紧凑的足迹。此外，它以零偏置运行，消耗零能量，并且具有超低的固有噪声等效功率（Nep $ \，$ <$ \，25 \：\ text {pw/} \ sqrt {\ sqrt {\ text {hz}}} $
Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon photonics, yet graphene absorbs only $\sim$2.3% of light. Plasmonic metals can enhance the responsivity of graphene photodetectors, but may result in CMOS-incompatible devices, depending on the choice of metal. Here, we propose a plasmon-enhanced photothermoelectric graphene detector using CMOS-compatible titanium nitride (TiN) on the silicon-on-insulator (SOI) platform. The device performance is quantified by its responsivity, operation speed, and noise equivalent power. Its bandwidth exceeds 100$\,$GHz, and it exhibits a nearly flat photoresponse across the telecom C-band. The photodetector responsivity is as high as 1.4$\,$A/W (1.1$\,$A/W external) at an ultra-compact length of 3.5$\,μ$m, which is the most compact footprint reported for a graphene-based waveguide photodetector. Furthermore, it operates at zero-bias, consumes zero energy, and has an ultra-low intrinsic noise equivalent power (NEP$\,$<$\,25\:\text{pW/}\sqrt{\text{Hz}}$)
