论文标题
抗铁磁Tmfeo中自旋重新定位过渡的电气检测
Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance
论文作者
论文摘要
tmfeo $ _3 $（TFO）是一种倾斜的抗fiferromagnet，在单晶中进行温度在82 K和94 K之间的自旋重新定向转变（SRT）。在此温度区域，Néel矢量从晶体学$ C $轴（低于82 K）连续旋转到$ a-axis（94 K以上）。 SRT允许在无需磁场的情况下对不同的抗铁磁状态进行温度控制，这使其易于在THZ频率上使用的应用。对于设备应用，需要TFO的薄膜以及用于读取磁性状态的电气技术。在这里，我们证明，可以通过脉冲激光沉积来生长正交TFO薄膜，并且可以通过使用所有电气自旋霍尔磁场（SMR）来访问TFO薄膜中SRT的检测，这很好地一致，以便在SRT发生的位置与温度范围一致。我们的结果表明，可以在绝缘子中电气检测SRT。
TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the Néel vector continuously rotates from the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at THz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for reading out the magnetic state. Here we demonstrate that orthorhombic TFO thin films can be grown by pulsed laser deposition and the detection of the SRT in TFO thin films can be accessed by making use of the all electrical spin Hall magnetoresistance (SMR), in good agreement for the temperature range where the SRT occurs. Our results demonstrate that one can electrically detect the SRT in insulators.
