论文标题
基于氮化物的界面层，用于在SI上进行新的太阳能材料的整体串联串联整合：CZTS案例
Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS
论文作者
论文摘要
第三代太阳能材料在硅上的整体串联串联整合对光电化学和光伏电源构成了巨大的希望。但是，当它涉及高温反应性过程时，这可能会具有挑战性，这可能会损害SI底部细胞。一种情况是薄膜果胶元素太阳能细胞中的高温硫化/硒化，其中kesterite Cu2ZNSNS4（CZTS）就是一个例子。在这里，通过在界面上使用非常薄（<10 nm）的基于锡的扩散屏障，具有不同的组成和特性，我们在设备级别上证明了SI底部单元的保护很大程度上取决于屏障层工程。几个单片CZTS/SI串联太阳能电池具有开路电压（VOC）高达1.06 V，效率高达3.9％，表明性能与基于透明的导电氧化物相当，并指向Solar Energy Energy Energy Energy Evermation Eversonion Eversancion设备中有令人鼓舞的替代设计。
The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example. Here, by using very thin (<10 nm) TiN-based diffusion barriers at the interface, with different composition and properties, we demonstrate on a device level that the protection of the Si bottom cell is largely dependent on the barrier layer engineering. Several monolithic CZTS/Si tandem solar cells with open-circuit voltages (Voc) up to 1.06 V and efficiencies up to 3.9% are achieved, indicating a performance comparable to conventional interfacial layers based on transparent conductive oxides, and pointing to a promising alternative design in solar energy conversion devices.
