论文标题
二维Van der Waals电气接触到单层Mosi $ _2 $ n $ _4 $
Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$
论文作者
论文摘要
二维（2D）MOSI $ _2 $ n $ _4 $单层是一类新兴的气稳定2D半导体，具有非凡的电气和机械性能。尽管最近致力于揭示Mosi $ _2 $ n $ _4 $的材料特性的大量研究工作，但到目前为止，电气接触物的物理学物理学$ _2 $ n $ _4 $仍然很大程度上尚未探索。在这项工作中，我们研究了由Mosi $ _2 $ n $ _4 $组成的Van der Waals异质结构，并使用第一原理密度功能理论计算与Graphene和NBS $ _2 $单层联系。我们表明，Mosi $ _2 $ n $ _4 $/nbs $ _2 $联系人展示了超大的Schottky屏障高度（SBH），这对纳米电子应用程序有益。对于Mosi $ _2 $ n $ _4 $/石墨烯触点，可以通过层间距离或外部电场调制SBH，从而为可重新配置且可调的纳米电机设备提供了机会。我们的发现提供了有关MOSI $ _2 $ n $ _4 $的2D电气接触物理的见解，并应为设计高性能电与MOSI $ _2 $ _4 $ _4 $ _4 $ _4 $基于2D Nanodevices的关键第一步。
Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi$_2$N$_4$ contacted by graphene and NbS$_2$ monolayers using first-principle density functional theory calculations. We show that the MoSi$_2$N$_4$/NbS$_2$ contact exhibits an ultralow Schottky barrier height (SBH), which is beneficial for nanoelectronics applications. For MoSi$_2$N$_4$/graphene contact, the SBH can be modulated via interlayer distance or via external electric fields, thus opening up an opportunity for reconfigurable and tunable nanoelectronic devices. Our findings provide insights on the physics of 2D electrical contact to MoSi$_2$N$_4$, and shall offer a critical first step towards the design of high-performance electrical contacts to MoSi$_2$N$_4$-based 2D nanodevices.
