论文标题
平面各向异性过渡金属二甲元中氧缺陷的患病率
Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide
论文作者
论文摘要
半导体中的原子量表缺陷使其技术应用和新型量子状态的实现。使用AB-Initio计算补充的扫描隧道显微镜和光谱学，我们确定了各向异性范德华层中缺陷的性质，分层半导体res $ _2 $。我们通过直接可视化形成钻石形簇的rhenium原子的链条，证明了晶格的平面各向异性。使用扫描隧道光谱法，我们测量了状态密度的半导体间隙。我们揭示了晶格缺陷的存在，并通过将其地形和光谱特征与从头算计算进行比较，我们确定它们的起源是在晶格点缺陷位点吸收的氧原子。这些结果为半导体过渡金属二分法源提供了原子尺度的视野，为理解和工程性特性铺平了道路。
Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab-initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS$_2$. We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of rhenium atoms forming diamond-shaped clusters. Using scanning tunneling spectroscopy we measure the semiconducting gap in the density of states. We reveal the presence of lattice defects and by comparison of their topographic and spectroscopic signatures with ab initio calculations we determine their origin as oxygen atoms absorbed at lattice point defect sites. These results provide an atomic-scale view into the semiconducting transition metal dichalcogenides, paving the way toward understanding and engineering their properties.
