论文标题
SNXSB1-X的结构表征晶体的激发态动力学
Excited-state dynamics of structurally characterized crystal of SnxSb1-x
论文作者
论文摘要
重金属合金的拓扑行为为令人难以置信的研究和未来技术开辟了广阔的领域。在这里,我们扩展了先前有关SN0.4SB0.6超导性能以及SNXSB1-X中SN和SB的组成变化(具有(X = 0.5和0.6))的报告,以研究详细的光学特性。生长晶体的结构和形态学细节来自先前的研究。此外,对于瞬时反射率超快研究(TRUS)测量值,在NIR方案中,样品被2.61 eV的泵激发,其宽探头为0.77-1.54 eV。差异反射率曲线显示出空前的负幅度,并且已经分析了这种负趋势的平均功率依赖性分析。本文不仅提供了样品中带填充现象的证据,而且还表明,随着平均功率的变化,激发荷载载流子有一定的增加,从而增强了频带填充响应。这些研究还确定了带填充状态和价值状态之间的带隙的估计值。所研究拓扑合金和类似材料的非线性性能和带隙分析有助于提高各种非线性光学应用。
The topological behavior of heavy metal alloys opens a vast area for incredible research and future technology. Here, we extend our previous report about the superconducting properties of Sn0.4Sb0.6 along with the compositional variation of Sn and Sb in SnxSb1-x (with (X=0.5 and 0.6)) to study the detailed optical properties. Structural and morphological details of grown crystal are carried from the previous study. Further, the samples are excited by a pump of 2.61 eV with a broad probe of 0.77-1.54 eV in the NIR regime for transient reflectance ultrafast studies (TRUS) measurements. The differential reflectance profile shows an unprecedented negative magnitude, and the average power-dependent analysis of this negative trend has been analyzed. This article not only provides evidence of band filling phenomenon in the samples but also shows that with the variation of average power, there is a definite increase in the excited charge carriers, and thereby enhancing the band filling response. The estimated value of the bandgap between the band filled states and valence state is also determined from these studies. The nonlinear properties and bandgap analysis of the studied topological alloys and similar materials help in the advancement of various nonlinear optical applications.