论文标题
用GAAS量化杂交像素检测器的性能：用于透射电子显微镜的CR传感器
Quantifying the Performance of a Hybrid Pixel Detector with GaAs:Cr Sensor for Transmission Electron Microscopy
论文作者
论文摘要
杂交像素探测器（HPD）已被证明对透射电子显微镜的基于衍射的和时间分辨的研究非常有效，但是它们的性能受到高能电子在其厚SI传感器的长距离散射的事实的限制。与单片活跃的像素传感器（MAP）相比，HPD的优势是它们的传感器不需要用Si制造。我们已经将MEDIPIX3 HPD的性能与SI传感器和GAAS：CR传感器进行了比较，并使用在60-300keV的能量范围内的主电子进行了比较。我们描述了检测器调制传递函数（MTF）和侦探量子效率（DQE）的测量和计算，这些效率（DQE）表明GAAS：CR设备的性能明显优于高能电子的SI设备。
Hybrid pixel detectors (HPDs) have been shown to be highly effective for diffraction-based and time-resolved studies in transmission electron microscopy, but their performance is limited by the fact that high-energy electrons scatter over long distances in their thick Si sensors. An advantage of HPDs compared to monolithic active pixel sensors (MAPS) is that their sensor does not need to be fabricated from Si. We have compared the performance of the Medipix3 HPD with a Si sensor and with a GaAs:Cr sensor using primary electrons in the energy range of 60 - 300keV. We describe the measurement and calculation of the detectors' modulation transfer function (MTF) and detective quantum efficiency (DQE), which show that the performance of the GaAs:Cr device is markedly superior to that of the Si device for high-energy electrons.
