论文标题
改善了MOSFET隔离氧化物中辐射引起的缺陷的堆积模型
Improved Buildup Model for Radiation-Induced Defects in MOSFET Isolation Oxides
论文作者
论文摘要
电离辐射在电流MOSFET中诱导STI氧化物的缺陷。这些缺陷可能会降低MOS电路的性能。文献中可以使用用于辐射暴露期间这些缺陷的分析模型。在本文中，我们表明，用于估计大多数捕集诱导的陷阱的经典模型预测在高辐射水平下的结果不准确。此外，我们引入了一个改进的模型，以估计对低辐射剂量和高辐射剂量有效的缺陷的积累。将我们改进的模型与显示其有效性的已发布数据进行了比较。
Ionizing radiation induces defects in STI oxides in current MOSFETs. These defects may degrade the performance of the MOS circuit. Analytical models for the buildup of these defects during the radiation exposure are available in literature. In this paper, we show that the classical model used to estimate the buildup of TID-induced traps in MOSTs predicts inaccurate results at high radiation levels. We, further, introduce an improved model to estimate the buildup of defects that is valid for both low and high radiation doses. Our improved model is compared to published data showing its validity.
