论文标题
Sigesn/GESN单量子的研究很好
Study of SiGeSn/GeSn single quantum well towards high-performance all-group-IV optoelectronics
论文作者
论文摘要
（SI）GESN光电设备的最新进展对于SI底物上的光子整合具有很大的希望。与散装设备的开发并行，已经研究了（SI）基于GESN的量子井（QW），以改善设备性能。虽然对于设备应用而优选多个QW结构，但单个量子井（SQW）更适合光学性质研究。在这项工作中，进行了对Sigesn/Gesn SQW的全面研究。计算出的带图提供了可能的跃迁和可能的跃迁能量。 SQW具有直接带隙井，其中L-γ谷能量分离为50 MeV，电子和孔的屏障高度大于80 MEV。使用两个连续波和两个脉冲泵送激光器，PL光谱的分析允许识别不同的过渡并更好地理解SQW光学性能。这项研究可以为将未来的QW设计推向设备应用提供指导。
The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si)GeSn based quantum wells (QWs) have been investigated aiming to improve the device performance. While the multiple QW structure is preferred for the device application, the single quantum well (SQW) is more suitable for optical property study. In this work, a comprehensive study of a SiGeSn/GeSn SQW was conducted. The calculated band diagram provided the band alignment and energies of possible transitions. The SQW features the direct bandgap well with L-Γ valley energy separation of 50 meV, and the barrier heights for both electron and hole are greater than 80 meV. Using two continuous-wave and two pulsed pumping lasers, the analysis of PL spectra allows for identifying different transitions and for better understanding the SQW optical properties. The study could provide the guidance for advancing the future QW design towards device applications.
