论文标题
半导体的半身赫斯勒化合物FEVSB中的电子相关性
Electronic correlations in the semiconducting half-Heusler compound FeVSb
论文作者
论文摘要
电子相关性对于具有本地化$ d $和$ f $州的金属系统的低能物理学至关重要；但是，它们对带绝缘体和半导体的影响通常可以忽略不计。在这里，我们测量了Half-Heusler化合物FEVSB的电子结构，这是一个带有填充的外壳配置的频带绝缘子，每个配方单元（$ s^2 P^6 d^{10} $）。角度分辨光发射光谱（ARPES）揭示了$ m^{*}/m_ {bare} = 1.4 $的质量重归其化，其中$ m^{*} $是测量的有效质量，$ m_ {bare} $是质量（dft）的质量（dft）量，没有添加了colomb coulomb coulomb coulomb repuls coulomb pollomb。我们的测量与动态平均场理论（DMFT）计算的定量一致，强调了质量重质化的多体。这种质量重新规定与其他填充的金属间代理形成鲜明对比，包括热电材料COTISB和Nitisn。并且具有与FESI相似的起源，在FESI中，Hund耦合在整个间隙上引起的波动可以解释动态的自我能源和相关性。我们的工作要求重新考虑相关性和金属间绝缘体中的偶联的作用。
Electronic correlations are crucial to the low energy physics of metallic systems with localized $d$ and $f$ states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the half-Heusler compound FeVSb, a band insulator with filled shell configuration of 18 valence electrons per formula unit ($s^2 p^6 d^{10}$). Angle-resolved photoemission spectroscopy (ARPES) reveals a mass renormalization of $m^{*}/m_{bare}= 1.4$, where $m^{*}$ is the measured effective mass and $m_{bare}$ is the mass from density functional theory (DFT) calculations with no added on-site Coulomb repulsion. Our measurements are in quantitative agreement with dynamical mean field theory (DMFT) calculations, highlighting the many-body origin of the mass renormalization. This mass renormalization lies in dramatic contrast to other filled shell intermetallics, including the thermoelectric materials CoTiSb and NiTiSn; and has a similar origin to that in FeSi, where Hund's coupling induced fluctuations across the gap can explain a dynamical self-energy and correlations. Our work calls for a re-thinking of the role of correlations and Hund's coupling in intermetallic band insulators.
