论文标题
p-n-p突然异质结构垂直到温度梯度的热电性能
Thermoelectric performance of P-N-P abrupt heterostructures vertical to temperature gradient
论文作者
论文摘要
我们提出了P-N-P突然异质结构垂直到温度梯度的模型，以改善热电性能。 P-N-P异质结构被认为是突然的双极连接晶体管，这是由于与耗尽层平行的外部施加温度梯度。例如，我们将BI2TE3和BI0.5SB1.5TE3分别为N型和P型热电材料，例如，我们实现了控制Seebeck系数和电导率的目的，同时放大操作功率。计算的结果表明，Seebeck系数可以达到3312V/K，并且该模型的ZTMAX值为45或425，比散装材料和薄膜的ZTMAX值比数十甚至数百倍。
We present a model for P-N-P abrupt heterostructures vertical to temperature gradient to improve the thermoelectric performance. The P-N-P heterostructure is considered as an abrupt bipolar junction transistor due to an externally applied temperature gradient paralleled to depletion layers. Taking Bi2Te3 and Bi0.5Sb1.5Te3 as N-type and P-type thermoelectric materials respectively for example, we achieve the purpose of controlling the Seebeck coefficient and the electrical conductivity independently while amplifying operation power. The calculated results show that the Seebeck coefficient can reach 3312V/K, and the ZTmax values of this model are 45 or 425, which are tens or even hundreds of times greater than those of bulk materials and films.
