论文标题
海森堡型MNPS3中抗铁磁相变的厚度依赖性
Thickness dependence of antiferromagnetic phase transition in Heisenberg-type MnPS3
论文作者
论文摘要
二维（2D）范德华（VDW）层次磁性材料在几层厚度的2D极限中的行为是理解较低尺寸中磁性排序的重要基本问题。海森堡型2D磁VDW材料MNPS3的抗铁磁过渡温度TN估计是层数的函数。通过温度依赖性拉曼光谱鉴定抗铁磁过渡，这是从155 cm-1处的声子峰的扩展，并伴随着突然的红移和光谱量的增加。发现TN仅略微降低了散装的〜78 k至3L的〜66 k。接近2D极限的细MNPS3中TN的少量还原表明，层间相互作用在稳定分层磁性材料中的磁有序中起着重要作用。
The behavior of 2-dimensional (2D) van der Waals (vdW) layered magnetic materials in the 2D limit of the few-layer thickness is an important fundamental issue for the understanding of the magnetic ordering in lower dimensions. The antiferromagnetic transition temperature TN of the Heisenberg-type 2D magnetic vdW material MnPS3 was estimated as a function of the number of layers. The antiferromagnetic transition was identified by temperature-dependent Raman spectroscopy, from the broadening of a phonon peak at 155 cm-1, accompanied by an abrupt redshift and an increase of its spectral weight. TN is found to decrease only slightly from ~78 K for bulk to ~ 66 K for 3L. The small reduction of TN in thin MnPS3 approaching the 2D limit implies that the interlayer vdW interaction is playing an important role in stabilizing magnetic ordering in layered magnetic materials.
