论文标题
超导电路的外延/GAAS/Al Trilayer的低温微波损失
Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits
论文作者
论文摘要
外上内生长的超导体/介电/超导体三层有可能形成高性能超导量子设备，甚至可能允许使用低表面面积量子（如合并元素transmon）进行可扩展的超导量子计算。在这项工作中，我们通过测量在Millikelvin温度下和单个光子幂下的小元件超导元件，通过测量集团的超导元件超导元件来衡量上外延，晶圆键和底物损坏的损失和两级状态（TLS）损失。设备的功率无关损失为$（4.8 \ pm 0.1）\ times 10^{ - 5} $，谐振器诱导的内部TLS损失为$（6.4 \ pm 0.2）\ times 10^{ - 5} $。介电损耗提取用于确定三边形的内在TLS损失的下限为$ 7.2 \ times 10^{ - 5} $。异常高功率独立的损失归因于GAA的内在压电性。
Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconducting quantum computing with low-surface-area qubits such as the merged-element transmon. In this work, we measure the power-independent loss and two-level-state (TLS) loss of epitaxial, wafer-bonded, and substrate-removed Al/GaAs/Al trilayers by measuring lumped element superconducting microwave resonators at millikelvin temperatures and down to single photon powers. The power-independent loss of the device is $(4.8 \pm 0.1) \times 10^{-5}$ and resonator-induced intrinsic TLS loss is $(6.4 \pm 0.2) \times 10^{-5}$. Dielectric loss extraction is used to determine a lower bound of the intrinsic TLS loss of the trilayer of $7.2 \times 10^{-5}$. The unusually high power-independent loss is attributed to GaAs's intrinsic piezoelectricity.
