论文标题
考虑到接触电阻的明确贡献，小信号GFET等效电路
A small-signal GFET equivalent circuit considering an explicit contribution of contact resistances
论文作者
论文摘要
考虑到金属晶格界面在金属 - 晶烯界面上的明确贡献，提出了用于石墨烯场现场效应晶体管的小信号等效电路。考虑了一种将接触电阻与固有参数分开的方法，该方法是通过解放过程获得的，并且考虑了电路的外部参数。提议的小信号电路正确地描述了来自两种不同GFET技术的三个设备的实验性高频性能。某些模型参数与设备占地面积缩放。内部晶体管的接触电阻的正确脱离使其能够评估其对所研究设备内在截止频率的影响。
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact resistances from intrinsic parameters, obtained by a de-embedding process, and extrinsic parameters of the circuit is considered. The experimental high-frequency performance of three devices from two different GFET technologies is properly described by the proposed small-signal circuit. Some model parameters scale with the device footprint. The correct detachment of contact resistances from the internal transistor enables to assess their impact on the intrinsic cutoff frequency of the studied devices.
