论文标题
单层石墨烯中的高阶拓扑
Higher-order topology in monolayer graphene
论文作者
论文摘要
我们表明，单层石墨烯本质上具有高阶拓扑角状态，其中电子在原子尺寸处局部局部化。石墨烯中拓扑角状态的出现是由于两个独立方向的Zak相的非平凡产物引起的，可以通过使用散装波形来图形地计算出Zak阶段。我们给出一个明确的表达，表明存在各种几何边缘和角角的拓扑角状态。我们还通过放置假想的现场潜在掩码来证明石墨烯中拓扑角状态的非平凡定位性质。
We show that monolayer graphene intrinsically hosts higher-order topological corner states, in which electrons are localized topologically at atomic sizes. The emergence of the topological corner states in graphene is due to a nontrivial product of the Zak phases for two independent directions, which can be handily calculated graphically by using the bulk wavefunctions. We give an explicit expression that indicates the existence of topological corner states for various geometric edges and corner angles. We also demonstrate the nontrivial localization nature of the topological corner states in graphene by putting an imaginary onsite potential mask.
