论文标题

在外皮ruddlesden-popper pr $ _ {0.5} $ ca $ _ {1.5} $ mno $ _ {4}

Tailoring c-axis orientation in epitaxial Ruddlesden-Popper Pr$_{0.5}$Ca$_{1.5}$MnO$_{4}$ films

论文作者

Hoffmann-Urlaub, Sarah, Ross, Ulrich, Hoffmann, Jörg, Belenchuk, Alexandr, Shapoval, Oleg, Roddatis, Vladimir, Ma, Qian, Kressdorf, Birte, Moshneaga, Vasily, Jooss, Christian

论文摘要

对分层ruddlesden-popper的兴趣密切相关的Pr $ _ {0.5} $ ca $ _ {1.5} $ mno $ _4 $以及其薄膜多晶型物的兴趣是由高度轨道序列的高温轨道订购的动机。我们报告了在Srtio $ _3 $(STO)基材上生长的外观上的RP-PCMO膜中C轴取向的定制,具有不同的方向以及使用CAMNO $ _3 $(CMO)缓冲层。 Sto(110)上的胶片显示,c轴的平面对准位于[100]方向上。在STO(100)上,平面内C轴的两个可能方向导致类似的镶嵌物,如准二维纳米结构,由RP,岩盐和钙钛矿组成。通过使用CMO缓冲层,实现了带有C轴外的RP-PCMO外延膜。为了区分生长条件和内在的外延特性的效果,使用了不同的物理蒸气沉积技术,即离子束溅射(IBS),脉冲激光沉积(PLD)以及金属有机气雾剂沉积(MAD)。对于所有沉积技术,尽管它们的生长条件非常不同,但薄膜的表面形态,晶体结构和方向揭示了高水平的相似性,如X射线衍射,扫描和高分辨率透射透射电子显微镜所证实。我们发现,对于不同的外延关系,膜中的应力可以通过修改的界面化学来放松。通过电阻率测量估计的膜中的电荷顺序发生在接近散装材料预期的温度下。

Interest for layered Ruddlesden-Popper strongly correlated manganites of Pr$_{0.5}$Ca$_{1.5}$MnO$_4$ as well as to their thin film polymorphs is motivated by the high temperature of charge orbital ordering above room temperature. We report on the tailoring of the c-axis orientation in epitaxial RP-PCMO films grown on SrTiO$_3$ (STO) substrates with different orientations as well as the use of CaMnO$_3$ (CMO) buffer layers. Films on STO(110) reveal in-plane alignment of the c-axis lying along to the [100] direction. On STO(100), two possible directions of the in-plane c-axis lead to a mosaic like, quasi two-dimensional nanostructure, consisting of RP, rock-salt and perovskite building blocks. With the use of a CMO buffer layer, RP-PCMO epitaxial films with c-axis out-of-plane were realized. Different physical vapor deposition techniques, i.e. ion beam sputtering (IBS), pulsed laser deposition (PLD) as well as metalorganic aerosol deposition (MAD) are applied in order to distinguish between the effect of growth conditions and intrinsic epitaxial properties. For all deposition techniques, despite their very different growth conditions, the surface morphology, crystal structure and orientation of the thin films reveal a high level of similarity as verified by X-ray diffraction, scanning and high resolution transmission electron microscopy. We found that for different epitaxial relations the stress in the films can be relaxed by means of a modified interface chemistry. The charge ordering in the films estimated by resistivity measurements occurs at a temperature close to that expected in bulk material.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源