论文标题
反向电阻转换：横向绝缘屏障的电压驱动的形成
Resistive switching in reverse: voltage driven formation of a transverse insulating barrier
论文作者
论文摘要
将电刺激施加到具有金属 - 绝缘体过渡的材料上会触发巨大的阻力变化。电阻性从绝缘变为金属阶段，通常是通过与当前流相平行的导丝形成发生的，这通常是一个主动的研究主题。在这里，我们介绍了相反的金属到绝缘体切换，该切换是通过垂直于驱动电流的核定屏障的成核和生长来进行的。屏障的形成导致当前电压特性中异常的N型负差分电阻。电诱导横向屏障可以实现一种新型的电压控制磁性方法。通过在磁性材料中触发金属到绝缘体电阻开关，可以通过应用于整个设备的全局电压偏置来实现铁磁性的局部/关控制。
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting filaments parallel to the current flow, has been an active research topic. Here we present the discovery of an opposite, metal-to-insulator switching that proceeds via nucleation and growth of an insulating barrier perpendicular to the driving current. The barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. Electrically inducing a transverse barrier enables a novel approach to voltage-controlled magnetism. By triggering a metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism can be achieved by a global voltage bias applied to the whole device.
