论文标题
与硅硅薄膜的纳米级结构表征与磁性和电特性相关
Nanoscale structural characterization of manganite thin films integrated to silicon correlated with their magnetic and electric properties
论文作者
论文摘要
在高质量的LA0.66SR0.33MNO3（LSMO）薄膜上进行了详细的纳米级结构表征，具有不同厚度的薄膜，并通过脉冲激光沉积沉积到缓冲的Si（100）底物上。由Y0.13ZR0.87O2（YSZ）和CEO2层构建的多层结构用作缓冲液，以优化锰矿膜的生长。使用不同的实验技术分析了不同层的堆叠，它们的形成，组成和菌株。用反射高能电子衍射进行的薄膜的原位表征显示它们的外延生长和光滑的表面。高分辨率的透射电子显微镜（HR-TEM）图像显示了晶格组成部分之间的尖锐接口，并与能量分散性X射线分析结合使用，使我们能够确定它们之间没有离子互换。 HR-TEM图像的傅立叶 - 福斯特转换用于解析层之间的外观关系，从而导致[100] LSMO（001）// [110] CEO2（001）// [110] ysz（001）// [110] ysz（001）// [110] si（001）。发现LSMO薄膜在低温下是铁磁和金属的，无论其厚度如何。菌株和缺陷的作用仅在比15 nm的薄膜中检测到，并通过X射线衍射模式提供证据，并与磁性和电参数相关。
A detailed nanoscale structural characterization was performed on high-quality La0.66Sr0.33MnO3 (LSMO) thin films of different thicknesses and deposited by pulsed laser deposition onto buffered Si (100) substrates. A multilayered structure built of Y0.13Zr0.87O2 (YSZ) and CeO2 layers was used as buffer in order to optimize the manganite films growth. The stacking of the different layers, their morpholohy, composition and strains were analysed using different experimental techniques. In-situ characterization of the films, performed with reflection high-energy electron diffraction, revealed their epitaxial growth and smooth surfaces. High-resolution transmission electron microscopy (HR-TEM) images showed sharp interfaces between the constituents lattices and combined with energy-dispersive X-ray analysis allowed us to determine that there was no ion interdifussion across them. The Fourier-Fast-Transform of the HR-TEM images was used to resolve the epitaxy relationship between the layers, resulting in [100] LSMO (001) // [110] CeO2 (001) // [110] YSZ (001) // [110] Si (001). The LSMO thin films were found to be ferromagnetic and metallic at low temperature regardless their thickness. The effect of strains and defects was only detected in films thinner than 15 nm and put in evidence by X-ray diffraction patterns and correlated with magnetic and electrical parameters.
