论文标题
第二次谐波生成MOSI2N4层
Second Harmonic Generation of MoSi2N4 Layer
论文作者
论文摘要
最近发现的二维（2D）分层半导体MOSI2N4由于其独特的2D材料特征引起了极大的兴趣。在这封信中，我们发现MOSI2N4的结构细节上的差异可能导致第二次谐波生成强度（SHG）及其对应变的反应的差异。因此，SHG可以用作一种简单的技术来识别该系统的结构细节。我们进一步计算了MOSI2N4衍生物的SHG效应，并研究了其应变机制，特别是包括MOSI2P4和MOGE2P4菌株下的异常SHG反应，与其他已知的2D材料不同。这些研究可能对这种新型2D材料系统的非线性光学和光电子学的研究具有前瞻性的重要性。
The recently discovered two-dimensional (2D) layered semiconductor MoSi2N4 has aroused great interest due to its unique 2D material characteristics. In this Letter, we found that differences in the structural details for MoSi2N4 may lead to differences in the intensity of second harmonic generation (SHG) and its response to strain. Accordingly, SHG can be used as a simple technique to identify the structural details of this system. We further calculated the SHG effects of MoSi2N4 derivatives and investigated their strain-regulation mechanism, especially including the anomalous SHG responses under strain for MoSi2P4 and MoGe2P4, differing from other known 2D materials. The studies may have forward-looking significance for the research of nonlinear optics and optoelectronics in this novel 2D material system.
