论文标题
INSB纳米线量子点中电子各向异性G因子的测量
Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots
论文作者
论文摘要
我们已经测量了在狭窄的带隙INSB纳米线形成的几个电子量子点（QD）中的量子分裂，该量子水平是通过Schottky屏障在狭窄的带隙INSB纳米线中形成的，该障碍物在采用不同的空间取向磁场的情况下接触。从测量值中提取的有效G因子张量是强烈的各向异性和级别依赖性的，这可以归因于QD中强的自旋轨道相互作用（SOI）和非对称量子限制电位。我们已经证明了通过三个正交平面中磁场旋转下的测量值成功地确定了INSB纳米线QD中G因子张量的主要轴方向。我们还检查了INSB纳米线QD中激发光谱的磁场演变，并提取$δ_{so} \ sim 180 $ $ $ $ $ $ $ $ $ $ $ EV的SOI强度，从避免的级别交叉和其邻近的QD中的邻近的首个激发状态之间的频率交叉。
We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic fields. The effective g-factor tensor extracted from the measurements is strongly anisotropic and level-dependent, which can be attributed to the presence of strong spin-orbit interaction (SOI) and asymmetric quantum confinement potentials in the QDs. We have demonstrated a successful determination of the principal values and the principal axis orientations of the g-factor tensors in an InSb nanowire QD by the measurements under rotations of a magnetic field in the three orthogonal planes. We also examine the magnetic-field evolution of the excitation spectra in an InSb nanowire QD and extract a SOI strength of $Δ_{so}\sim 180$ $μ$eV from an avoided level crossing between a ground state and its neighboring first excited state in the QD.
