论文标题
电压驱动的磁化通过狄拉克磁各向异性和旋转 - 基于拓扑 - 绝缘体的磁性异质结构的旋转扭矩
Voltage-driven Magnetization Switching via Dirac Magnetic Anisotropy and Spin--orbit Torque in Topological-insulator-based Magnetic Heterostructures
论文作者
论文摘要
磁化动力学的电场控制对于将来的Spintronic设备在根本上和技术上至关重要。在这里，基于磁各向异性和自旋 - 轨道扭矩的电场控制，提出了两种不同的方法，用于切换拓扑绝缘器（TI）/磁性TI混合系统中的磁化。磁性TIS中的磁各向异性能量是通过Fermi能量的函数进行分析配方的，并且可以证实，对于部分占据的表面带，始终有利于平面外磁化。还提出的是一种类似晶体管的设备，具有非易失性磁记忆的功能，该功能使用电压驱动的写入和（量子）异常霍尔进行读数。 For the magnetization reversal, by using parameters of Cr-doped Bi_{1-x}Sb_{x})_{2}Te_{3}, the estimated source-drain current density and gate voltage are of the orders of $10^4$--$10^5$~A/cm$^2$ and 0.1~V, respectively, below 20~K and the writing requires no external magnetic field.还讨论了通过磁接近效应的Ti/铁磁塑料双层中提出的方法在TI/铁磁肿瘤双层中进行磁化切换的可能性。
Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods are presented for switching the magnetization in topological insulator (TI)/magnetic-TI hybrid systems. The magnetic anisotropy energy in magnetic TIs is formulated analytically as a function of the Fermi energy, and it is confirmed that the out-of-plane magnetization is always favored for the partially occupied surface band. Also proposed is a transistor-like device with the functionality of a nonvolatile magnetic memory that uses voltage-driven writing and the (quantum) anomalous Hall effect for readout. For the magnetization reversal, by using parameters of Cr-doped Bi_{1-x}Sb_{x})_{2}Te_{3}, the estimated source-drain current density and gate voltage are of the orders of $10^4$--$10^5$~A/cm$^2$ and 0.1~V, respectively, below 20~K and the writing requires no external magnetic field. Also discussed is the possibility of magnetization switching by the proposed method in TI/ferromagnetic-insulator bilayers with the magnetic proximity effect.
