论文标题
混合III-V硅光子晶体腔发射在电信波长处
Hybrid III-V Silicon Photonic Crystal Cavity Emitting at Telecom Wavelengths
论文作者
论文摘要
光子晶体（PHC）腔是由于其超高质量（Q）因素和小模式体积而导致的SI光子综合电路的有前途的候选。在这里，我们展示了一个一维混合III-V/SI PHC腔的新颖概念，该腔功能利用了标准的硅 - 绝缘体技术和主动III-V材料的组合。使用模板辅助选择性外观，Si PHC晶格的中心部分被局部用III-V增益材料代替。将III-V材料放置在与腔模式场轮廓的最大值重叠，同时将PHC的主要部分保留在Si中。选择性的外观过程可以平行于基材，因此可以与SI以及平面内均值和异性结合。制造的混合III-V/SI PHC在室温下从1.2μm到1.6μm的整个电信带的发射，验证了设备概念及其在硅上完全集成光源的潜力。
Photonic crystal (PhC) cavities are promising candidates for Si photonics integrated circuits due to their ultrahigh quality (Q)-factors and small mode volumes. Here, we demonstrate a novel concept of a one-dimensional hybrid III-V/Si PhC cavity which exploits a combination of standard silicon-on-insulator technology and active III-V materials. Using template-assisted selective epitaxy, the central part of a Si PhC lattice is locally replaced with III-V gain material. The III-V material is placed to overlap with the maximum of the cavity mode field profile, while keeping the major part of the PhC in Si. The selective epitaxy process enables growth parallel to the substrate and hence, in-plane integration with Si, and in-situ in-plane homo- and heterojunctions. The fabricated hybrid III-V/Si PhCs show emission over the entire telecommunication band from 1.2 μm to 1.6 μm at room temperature validating the device concept and its potential towards fully integrated light sources on silicon.
