论文标题
量子热晶体管：稳态与瞬态状态的操作特征
Quantum thermal transistors: Operation characteristics in steady state versus transient regimes
论文作者
论文摘要
我们表明，量子热晶体管也会引起晶体管效应 - 在三个端子中，一个终端中一个可以控制其他两个终端的流动流 - 在某些范式初始状态下，在瞬态方向上具有良好的扩增性能。我们发现了三个宽类的瞬态量子热晶体管 - 第一个具有比稳态量子热晶体管更小的扩增，第二个具有更好的扩增，但在温度方面具有较小的操作区域，而第三个具有较大的工作区域的放大区域。最后类型特别令人感兴趣，因为它也在稳态热晶体管失去晶体管效应的区域。我们详细讨论某些初始状态必然会出现瞬态晶体管的情况。我们分析了瞬态热晶体管的扩增因子的时间变化，并估计它们可以有效工作的可取时间和持续时间。还列出了关于量子热晶体管的非基端末端的热电流放大幅度差异的累积研究，首先是相对于基础末端温度的，下一个随时间的。
We show that a quantum thermal transistor can also cause the transistor effect - where one out of three terminals can control the flow of heat current in the other two - with good amplification properties in the transient regime for certain paradigmatic initial states. We find three broad classes of transient quantum thermal transistors - the first having a smaller amplification than the steady state quantum thermal transistor, the second with better amplification but a smaller operating region in terms of temperature, and the third that gives higher amplification with a larger operating region. The last type is of particular interest as it also operates in the region where the steady state thermal transistors lose the transistor effect. We discuss in some detail certain initial states for which the cases of necessarily transient transistors arise. We analyze the time variation of the amplification factor of transient thermal transistors and estimate the preferable time and duration for which they can work efficiently. Cumulative studies of the differences in magnitudes of the amplifications of heat currents at the non-base terminals of the quantum thermal transistor, first with respect to the base-terminal temperature and next with time, are also presented.
