论文标题
超电流超导yba $ _2 $ cu $ _3 $ o $ $ _ {7-δ} $薄膜在超高状态
Ultra-high critical current densities of superconducting YBa$_2$Cu$_3$O$_{7-δ}$ thin films in the overdoped state
论文作者
论文摘要
掺杂是调整铜酸盐功能的最相关的途径之一，它决定了这些令人印象深刻的超导材料的载体密度和整体物理特性。我们提出了一项YBA $ _2 $ cu $ _3 $ o $ o $ _ {7-δ} $（ybco）薄膜的氧气掺杂研究，从不足的状态到过多的状态，将测得的载载载载密度相关联，$ n_ \ n_ \ n_ \ n_ \ n_ \ n_ \ n_ \ textrm {h} $，textrm {h} $，poping op poping，$ p $ p $，$ p $ prys $ j_当前$ j; $ j; $我们的结果表明，具有电荷载体密度的$ j_ \ textrm {c} $的连续增加，在量子关键点（QCP）的5 k时达到90 mA/cm $^2 $，与超导浓缩能的增加有关。超高的$ J_ \ textrm {C} $实现的对应于Depairing电流的三分之一，即比YBCO电影中报告的价值高60％。超额制度的特征是突然增加了$ n_ \ textrm {h} $，这与QCP的费米 - 表面的重建相关。 YBCO超级启用YBCO开辟了一条有希望的途径，以扩展Rebco涂层导体用于应用的当前携带能力。
Doping is one of the most relevant paths to tune the functionality of cuprates, it determines carrier density and the overall physical properties of these impressive superconducting materials. We present an oxygen doping study of YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) thin films from underdoped to overdoped state, correlating the measured charge carrier density, $n_\textrm{H}$, the hole doping, $p$, and the critical current density, $J_\textrm{c}$. Our results show a continuous increase of $J_\textrm{c}$ with charge carrier density, reaching 90 MA/cm$^2$ at 5 K for $p$-doping at the Quantum Critical Point (QCP), linked to an increase of the superconducting condensation energy. The ultra-high $J_\textrm{c}$ achived corresponds to a third of the depairing current, i.e. a value 60 % higher than ever reported in YBCO films. The overdoped regime is characterized by a sudden increase of $n_\textrm{H}$, associated to the reconstruction of the Fermi-surface at the QCP. Overdoping YBCO opens a promising route to extend the current carrying capabilities of REBCO coated conductors for applications.
