论文标题
石墨烯设备中全球应变诱导的标量电势
Global strain-induced scalar potential in graphene devices
论文作者
论文摘要
通过机械扭曲晶体晶格，可以设计材料的电子和光学特性。在石墨烯中，这种失真的主要影响之一是狄拉克点的能量移位，通常被描述为标量电位。我们演示了如何在整个电子设备上系统地生成这种标量电势，以及如何在运输实验中检测到石墨烯功能的结果变化。结合拉曼光谱法，我们获得了与最近理论估计一致的特征标量电势。由于石墨烯中确定性生成的应变，这种直接证据表明，在宏观尺度上具有标量潜力，这为石墨烯和类似材料的光学和电子特性铺平了道路，并使用外部应变铺平了道路。
By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distortion is an energy shift of the Dirac point, often described as a scalar potential. We demonstrate how such a scalar potential can be generated systematically over an entire electronic device and how the resulting changes in the graphene work function can be detected in transport experiments. Combined with Raman spectroscopy, we obtain a characteristic scalar potential consistent with recent theoretical estimates. This direct evidence for a scalar potential on a macroscopic scale due to deterministically generated strain in graphene paves the way for engineering the optical and electronic properties of graphene and similar materials by using external strain.
