论文标题
高反射率III-二硝酸盐分布的Bragg反射剂在SI基板上生长
High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
论文作者
论文摘要
由Aln/Algan超级晶格组成的分布式Bragg反射器（DBR）是Si（111）底物种植的。通过直接在Si底物上种植DBR，可以通过在SI/ALN界面处的高折射率对比度提高总体反射率来实现SI上的第一个高反射性III二氮DBR。对于9倍DBR，测得的96.8％的峰值反射率实际上超过了96.1％的理论值。 Aln / Algan超级晶格的额外目的是补偿在无裂纹的500 nm gan / 7x dbr / si结构的生长过程中产生的大拉伸应变。这项成就打开了制造高质量的III二硝酸盐光电设备，而无需在不透明的SI底物中获得光吸收的可能性。
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflectance due to the high index of refraction contrast at the Si/AlN interface. For a 9x DBR, the measured peak reflectance of 96.8% actually exceeded the theoretical value of 96.1%. The AlN/AlGaN superlattice served the added purpose of compensating the large tensile strain developed during the growth of a crack-free 500 nm GaN / 7x DBR / Si structure. This achievement opens the possibility to manufacture high-quality III-nitride optoelectronic devices without optical absorption in the opaque Si substrate.
