论文标题
过渡金属二分裂基质的范德华异质结构中的层间耦合效应
Interlayer Coupling Effect in van der Waals Heterostructures of Transition Metal Dichalcogenides
论文作者
论文摘要
由二维（2D）过渡金属二核苷（TMDC）形成的范德华（VDW）杂词形成了一个有希望的平台，用于各种电子和光学特性。从头开始的结果表明，可以通过引入Janus WSSE单层而不是外部电场来调整TMDCS VDW杂项中I型频段对齐的频段偏移。根据对称分析，确定了TMDCS VDW杂词的允许的层跳跃通道，并开发了四级KP模型以获得层间跳。结果表明，层间耦合强度可以通过各种频带偏移介绍的层间电化器来调节。此外，还阐明了不同TMDCS VDW杂波中的层间山谷激子的形成机理的差异，并具有各种层间跳跃强度。
Van der Waals (vdW) heterobilayers formed by two-dimensional (2D) transition metal dichalcogenides (TMDCs) created a promising platform for various electronic and optical properties. ab initio band results indicate that the band offset of type-II band alignment in TMDCs vdW heterobilayer could be tuned by introducing Janus WSSe monolayer, instead of an external electric field. On the basis of symmetry analysis, the allowed interlayer hopping channels of TMDCs vdW heterobilayer were determined, and a four-level kp model was developed to obtain the interlayer hopping. Results indicate that the interlayer coupling strength could be tuned by interlayer electric polarization featured by various band offsets. Moreover, the difference in the formation mechanism of interlayer valley excitons in different TMDCs vdW heterobilayers with various interlayer hopping strength was also clarified.
