论文标题
$ _ {2} $ o $ $ _ {3} $单晶的散装热电导率
Thermal conductivity of bulk In$_{2}$O$_{3}$ single crystals
论文作者
论文摘要
$ _ {2} $ o $ _ {3} $中的透明半导体是一种技术上重要的材料。它结合了可见频率范围内的光学透明度和相当的电导率。我们介绍了$ _ {2} $ o $ $ _ {3} $晶体的热导率的研究，发现大约20 k，达到高达5,000 wk $^{ - 1} $^{ - 1} $ m $^{ - 1} $，可与硅的峰值导热率相当，并且仅超过了硅的峰值热量，并且仅由有效的媒介物使用。在存在类型的疾病的情况下，峰的幅度大大降低，这与移动电子的密度不仅仅是相关的。退火增强了声子平均自由路径的天花板。热导率最高的样品是在存在氢的情况下退火的样品。高于100 k的导热率独立于样品。在这种内在的状态中，以声子散射为主，热扩散率的幅度，$ d $与许多其他氧化物相当，其温度依赖性向$ t^{-1} $演变。 $ d $与声音速度正方形的比例产生了一个散射时间，从而遵守普朗克时间的预期缩放时间。
The transparent semiconductor In$_{2}$O$_{3}$ is a technologically important material. It combines optical transparency in the visible frequency range and sizeable electric conductivity. We present a study of thermal conductivity of In$_{2}$O$_{3}$ crystals and find that around 20 K, it peaks to a value as high as 5,000 WK$^{-1}$m$^{-1}$, comparable to the peak thermal conductivity in silicon and exceeded only by a handful of insulators. The amplitude of the peak drastically decreases in presence of a type of disorder, which does not simply correlate with the density of mobile electrons. Annealing enhances the ceiling of the phonon mean free path. Samples with the highest thermal conductivity are those annealed in the presence of hydrogen. Above 100 K, thermal conductivity becomes sample independent. In this intrinsic regime, dominated by phonon-phonon scattering, the magnitude of thermal diffusivity, $D$ becomes comparable to many other oxides, and its temperature dependence evolves towards $T^{-1}$. The ratio of $D$ to the square of sound velocity yields a scattering time which obeys the expected scaling with the Planckian time.
