论文标题
在非排化硅的侧面旋转阀中，室温下的磁化率超过1％
Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
论文作者
论文摘要
为了增强N型非脱位基于Si的侧面旋转阀（SI-LSV）的磁化率（MR）比率，我们通过更改封口绝缘子来修改SI层中的掺杂曲线，并将较大的局部应变引入Si通道。通过这些改进，在SI-LSV中达到的最高MR比率是1.4％，通过降低铁磁接触的电阻 - 区域产物的重要作用，并增强了SI通道中动量松弛时间的能力。
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.
