论文标题
Laalo3/srtio3金属绝缘体的纳米级控制使用超低电压电子光线光刻
Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography
论文作者
论文摘要
我们描述了一种使用超低电压电子光谱法（ULV-EBL）来控制LAALO3/SRTIO3界面处绝缘体 - 金属转变的方法。与以前的报道相比，使用导电原子 - 孔 - 微镜光刻（C-AFM），该方法可以以比C-AFM快10,000倍的写入速度（10 mm/s）提供可比的分辨率（〜10 nm）。写作技术是无损的，通过长时间暴露于空气，导电状态可逆。在观察到超导行为的毫米温度下，测量了代表设备的转运性能。我们还展示了在石墨烯/Laalo3/srtio3异质结构上创建导电设备的能力。基本机制被认为与调节基于C-AFM方法的相同机制密切相关。
We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing technique is non-destructive and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.
