论文标题
在外延生长的inas纳米片中自旋轨道相互作用的测量
Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets
论文作者
论文摘要
我们报告了由独立的，wurtzite-crystalline inas nanosheet制成的单门平面现场效应设备的低温运输研究。纳米片是通过分子束外延生长的，场效应设备的特征是栅极传递特性测量和磁场方向依赖于转运测量。测量结果表明，该设备具有出色的电气性能，而纳米片中的电子传输具有二维性质。在纳米片中提取了在不同的门电压和温度下对设备进行低场磁电导测量测量，并在纳米片中提取了特征性的传输长度，例如相干长度，自旋轨道长度和平均自由路径。发现纳米片中的自旋轨道长度在150 nm的顺序上很短，这表明INAS纳米片中存在强旋转轨道相互作用。我们的结果表明，外延，独立的INAS纳米片可以用作新兴的半导体纳米结构平台，用于用于旋转旋转，旋转量子和平面拓扑量子设备的应用。
We report on a low-temperature transport study of a single-gate, planar field-effect device made from a free-standing, wurtzite-crystalline InAs nanosheet. The nanosheet is grown via molecular beam epitaxy and the field-effect device is characterized by gate transfer characteristic measurements and by magnetic field orientation dependent transport measurements. The measurements show that the device exhibits excellent electrical properties and the electron transport in the nanosheet is of the two-dimensional nature. Low-field magnetoconductance measurements are performed for the device at different gate voltages and temperatures, and the characteristic transport lengths, such as phase coherent length, spin-orbit length and mean free path, in the nanosheet are extracted. It is found that the spin-orbit length in the nanosheet is short, on the order of 150 nm, demonstrating the presence of strong spin-orbit interaction in the InAs nanosheet. Our results show that epitaxially grown, free-standing, InAs nanosheets can serve as an emerging semiconductor nanostructure platform for applications in spintronics, spin qubits and planar topological quantum devices.
