学术文献库

Radiation-induced photocurrent in semiconductor devices can be simulated using complex physics-based models, which are accurate, but computationally expensive. This presents a challenge for implementing device characteristics in high-level circuit simulations where it is computationally infeasible to evaluate detailed models for multiple individual circuit elements. In this work we demonstrate a procedure for learning compact delayed photocurrent models that are efficient enough to implement in large-scale circuit simulations, but remain faithful to the underlying physics. Our approach utilizes Dynamic Mode Decomposition (DMD), a system identification technique for learning reduced order discrete-time dynamical systems from time series data based on singular value decomposition. To obtain physics-aware device models, we simulate the excess carrier density induced by radiation pulses by solving numerically the Ambipolar Diffusion Equation, then use the simulated internal state as training data for the DMD algorithm. Our results show that the significantly reduced order delayed photocurrent models obtained via this method accurately approximate the dynamics of the internal excess carrier density -- which can be used to calculate the induced current at the device boundaries -- while remaining compact enough to incorporate into larger circuit simulations.