论文标题
在隧道中反射电子和gaas中三角层的2D电子系统中的跨带极化子的反射
Reflection of Electrons during Tunneling and an Intersubband Polaron in the 2D Electron System of a Delta-Layer in GaAs
论文作者
论文摘要
研究了Al-$δ$ -GAAS结构，其中观察到近地表三角掺杂层的2D电子系统的一个或多个子带的隧道。观察到在洛 - phonon发射阈值处的电子的反射。当隧道过程中涉及一个新的子带时，当电子间带有2D系统中的电子间过渡并在单个子带中添加了lo-phonon的发射时，就会发生这种现象。结果表明，在跨带极化子共振的条件下，在隧道中占主导地位的反射过程占主导地位。但是，如果发生从三角层发生隧道，则在两个子带被占据时观察到反射过程。
Al-$δ$-GaAs structures are studied where tunneling to one or more subbands of the 2D electron system of a near-surface delta-doped layer is observed. Reflection of electrons at the threshold of the emission of LO-phonon is observed. This phenomenon occurs when a new subband is involved in the tunneling process and when intersubband transitions of the electrons in a 2D-system with the emission of LO-phonon are added to the inelastic tunneling within a single subband. It is shown that, under the conditions of an intersubband polaron resonance, the reflection processes dominate during tunneling into the delta-layer. If, however, tunneling from the delta-layer occurs, the reflection processes are observed when two subbands are occupied.
