论文标题
XPT3中的硬磁拓扑半学：浆果曲率和谐
Hard Magnetic Topological Semimetals in XPt3: Harmony of Berry Curvature
论文作者
论文摘要
众所周知，拓扑磁性半法（例如CO3SN2S2和CO2MNGA）显示出异国情调的传输特性，例如由于未补偿的浆果曲率而导致的大型内在异常（AHE）。高度对称的XPT3化合物表现出抗横断的淋巴结线，这是固有的浆果曲率大厅效应中的驱动机制。独特的是，这些化合物包含两组间隙的淋巴结线，它们和谐地统治了这个复杂的多播种系统中的浆果曲率。我们通过最先进的第一原理电子结构来计算CRPT3中1965 s/cm的最大AHE。我们已经通过磁控溅射增长了高质量的薄膜，并测量了1750 s/cm的稳健AHE，以用于不同的溅射生长条件。此外，立方膜沿[111]方向显示出硬磁轴。这些材料的便捷且可扩展的制造是将其集成到拓扑设备中的主要候选者。
Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, are known to display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt3 compounds display anti-crossing gapped nodal lines, which are a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped nodal lines that harmoniously dominate the Berry curvature in this complex multiband system. We calculate a maximum AHE of 1965 S/cm in the CrPt3 by a state-of-the-art first principle electronic structure. We have grown high-quality thin films by magnetron sputtering and measured a robust AHE of 1750 S/cm for different sputtering growth conditions. Additionally, the cubic films display a hard magnetic axis along [111] direction. The facile and scalable fabrication of these materials is prime candidates for integration into topological devices.
