论文标题
使用康普顿散射的硅传感器电荷校准的新方法
New Method for Silicon Sensor Charge Calibration Using Compton Scattering
论文作者
论文摘要
为了应对对撞机实验中预期的寿命辐射损伤的增加，硅传感器变得越来越薄。为了达到足够的检测效率，下一代检测器可能必须以低于1000个电子孔对的阈值进行操作。这些传感器上附加的芯片应校准为某些已知的外部电荷，但是在此电荷制度中缺乏传统来源。我们提出了一种基于康普顿散射的绝对电荷校准的新方法。过去，这种方法已用于刷新器的校准，但据我们所知，对于硅探测器而言，这种方法从来都不是。在这里，它已在RD53A读数集成电路上使用150微米厚的平面硅传感器进行了研究。
In order to cope with increasing lifetime radiation damage expected at collider experiments, silicon sensors are becoming increasingly thin. To achieve adequate detection efficiency, the next generation of detectors may have to operate with thresholds below 1000 electron-hole pairs. The readout chips attached to these sensors should be calibrated to some known external charge, but there is a lack of traditional sources in this charge regime. We present a new method for absolute charge calibration based on Compton scattering. In the past, this method has been used for calibration of scintillators, but to our knowledge never for silicon detectors. Here it has been studied using a 150 micron thick planar silicon sensor on an RD53A readout integrated circuit.
