论文标题
在Si（100）金属氧化物 - 氧化晶体管中的自旋共振下泵送的电荷泵送
Charge pumping under spin resonance in Si(100) metal-oxide-semiconductor transistors
论文作者
论文摘要
Gate-Pulse诱导的重组（称为电荷泵浦（CP））是一种基本载体重组过程，已被用作分析晶体管接口处缺陷（或悬挂键）的电性能的方法，现在被认为是良好的成熟和传统的。然而，尚未阐明负责CP缺陷的原点（键合），也没有阐明其详细的重组序列。为了解决这些问题，我们在SI（100）N型MOS晶体管中的温度为27至300 K的温度下研究了CP。我们获得了证据，表明PB0和E'CEMPERS是SI（100）界面的两个主要悬挂键，参与CP重组过程。我们还表明，依赖自旋的CP过程是通过电子 - 电子旋转对的形成来解释的，这反过来揭示了CP通过PB0和E'中心本质上是一个两电子过程。
Gate-pulse-induced recombination, known as the charge pumping (CP), is a fundamental carrier recombination process, and has been utilized as a method for analyzing electrical properties of defects (or dangling bonds) at the transistor interfaces, which is now recognized to be well-matured and conventional. Nevertheless, neither the origin (the bonding configuration) of the defects responsible for the CP, nor their detailed recombination sequence has been clarified yet for Si metal-oxide-semiconductor (MOS) interfaces. In order to address these problems, we investigated the CP under spin resonance conditions at temperatures ranging from 27 to 300 K in Si(100) n-type MOS transistors. We obtained evidence that Pb0 and E' centers, the two major dangling bonds at (and near) the Si(100) interface, participate in the CP recombination process. We also show that the spin-dependent CP process is explained by the formation of electron-electron spin pairs, which in turn reveals that the CP via Pb0 and E' centers is inherently a two-electron process.
