论文标题
瑞德伯格纠缠硅的大门
Rydberg Entangling Gates in Silicon
论文作者
论文摘要
在本文中，我们提出了一种新的Rydberg Gate Gate方案，我们在理论上证明了该方案的忠诚度和对现有协议的速度的数量级改善。我们发现，将此门应用于硅中的供体将有助于克服原子精度供体放置和实质性栅极调整的急剧要求，到目前为止，这已经阻碍了缩放率。我们使用有限元方法计算了几种供体物种的Multivalley Rydberg相互作用，并表明在这里首次计算的电偶极子和范德华相互作用，即使对于低俗的激发态也很重要。我们表明，在供体激发状态的寿命内，Rydberg Gate的运行是可能的，在存在腐蚀的情况下，以99.9％的保真度来创建钟形状态。
In this paper, we propose a new Rydberg entangling gate scheme which we demonstrate theoretically to have an order of magnitude improvement in fidelities and speed over existing protocols. We find that applying this gate to donors in silicon would help overcome the strenuous requirements on atomic precision donor placement and substantial gate tuning, which so far has hampered scaling. We calculate multivalley Rydberg interactions for several donor species using the Finite Element Method, and show that induced electric dipole and Van der Waals interactions, calculated here for the first time, are important even for low-lying excited states. We show that Rydberg gate operation is possible within the lifetime of donor excited states with 99.9% fidelity for the creation of a Bell state in the presence of decoherence.
