论文标题
在隧道delta-gaas/al结构中，在持续的隧道光电导电条件下的2D-宽带光谱变化
2D-subband spectra variations under persistent tunneling photoconductivity condition in tunnel delta-GaAs/Al structures
论文作者
论文摘要
在低温下，研究了Al/$δ$ -GAAS结构的2维状态。观察到$ t = 4.2 $〜$ k $的未居住子带的“增厚”被观察到2DEG的基态。发现子带级别在$ t = 77 $〜$ k $的情况下均匀地转移。在各种照明和不同温度下，持久性2D状态在隧道光谱中的行为使我们可以假设有两种PTPC机制，即，$δ$层的潜在良好特征的扩大和dx-Centers的光电离。
2DEG states of Al/$δ$-GaAs structures were investigated in the persistent tunneling photoconductivity (PTPC) regime at low temperatures. "Thickening" of the unoccupied subbands to the ground state of 2DEG was observed at $T=4.2$~$K$. It was found that there is a uniform shift of the subband levels at $T=77$~$K$. The behavior of the persistent 2D states in tunneling spectra after various illumination and at different temperatures allows us to assume that there are two PTPC mechanisms, namely, the broadening of the potential well profile of the $δ$-layer and photoionization of the DX-centers.
