论文标题
弯曲硅薄膜中的巨型柔韧性
Giant Flexoelectricity in Bent Silicon Thinfilms
论文作者
论文摘要
我们透露，由于符号无法沿着应变梯度方向迁移，可以引起固体的强挠性效应，这代表了对挠性性起源的新理解。除了线性响应理论之外，我们还说明了由弯曲硅薄膜中电场效应驱动的电荷迁移。由于这种电荷迁移，原子电荷的变化不再代表对应变梯度的线性响应，而所得的巨型挠性系数（尺寸依赖性）不能被视为批量特性。所获得的挠性系数与各种陶瓷报道的典型实验值很好地比较。我们的结果阐明了阐明理论与实验之间的差异，并为发现传统材料中出色的挠性性能铺平了一种新方法。
We reveal that strong flexoelectric effect of solids can be induced due to the signfi?cant charge migration along the strain gradient direction, which represents a new understanding of the origin of flexoelectricity. Beyond the linear response theory, we illustrate such charge migration that is driven by an electric field effect in bent silicon thinfilms. Due to such charge migration, the variation of atomic charge no longer represents a linear response to strain gradient and the resulting giant flexoelectric coeffcients being size dependent cannot be treated as a bulk property. The obtained flexoelectric coefficients compare well with the typical experimental values as reported in various ceramics. Our results shed light on elucidating the discrepancy between theory and experiment,and pave a new way to discover excellent flexoelectric performance in conventional materials.
