论文标题
非线性电子电路的随机热力学：计算KT周围的现实框架
Stochastic Thermodynamics of Non-Linear Electronic Circuits: A Realistic Framework for Computing around kT
论文作者
论文摘要
我们提出了一种一般形式主义，用于构建非线性电子电路热力学一致的随机模型。构成电路的设备可以具有任意的I-V曲线，并且可能包括亚阈值操作中的隧道连接，二极管和MOS晶体管。我们提供了这些模型的随机非平衡热力学的完整分析，确定了相关的热力学潜力，表征对不可逆熵产生的不同贡献，并获得了不同的波动定理。我们的工作提供了一个现实的框架，可以通过电子电路研究计算的热力学。我们通过构建CMOS逆变器的随机模型来证明这一点。我们发现，确定性分析仅与平衡波动的假设兼容，并分析非平衡波动如何引起其确定性传递函数的偏差。最后，在CMOS逆变器上建造，我们为利用固有噪声的概率位（或二进制随机神经元）提出了一个全曲线设计。
We present a general formalism for the construction of thermodynamically consistent stochastic models of non-linear electronic circuits. The devices constituting the circuit can have arbitrary I-V curves and may include tunnel junctions, diodes, and MOS transistors in subthreshold operation, among others. We provide a full analysis of the stochastic non-equilibrium thermodynamics of these models, identifying the relevant thermodynamic potentials, characterizing the different contributions to the irreversible entropy production, and obtaining different fluctuation theorems. Our work provides a realistic framework to study thermodynamics of computing with electronic circuits. We demonstrate this point by constructing a stochastic model of a CMOS inverter. We find that a deterministic analysis is only compatible with the assumption of equilibrium fluctuations, and analyze how the non-equilibrium fluctuations induce deviations from its deterministic transfer function. Finally, building on the CMOS inverter, we propose a full-CMOS design for a probabilistic bit (or binary stochastic neuron) exploiting intrinsic noise.
