论文标题
通过噪声光谱探索的硅杂结太阳能电池：空间选择性和A-SI钝化层的影响
Silicon heterojunction solar cells explored via noise spectroscopy: spatial selectivity and the influence of a-Si passivating layers
论文作者
论文摘要
我们已经采用了最先进的互相关噪声光谱来研究硅异质结太阳能电池中的载体动力学，并通过同一设备的Sentarus模拟称赞。这些细胞由通过钝化I-A-Si的层层接触的光吸收的N掺杂的晶体硅层组成：H和掺杂的A-SI：H电极层。该方法提供了两种速度的提高灵敏度，并允许除了1/f噪声外，还可以分辨出对噪声的三个额外贡献。我们已经观察到接近统一的Fano因子的射击噪声。我们还观察到了一个特殊的产生结构项，该项仅在光照明下以高于2 eV的光照明，从而反映了A-SI：H层中的光吸收和载体捕获。在低于100 K的温度下检测到第二个低频产生结构性项。我们认为这是因为跨I-A-SI的电荷载体转移过程是通过I-A-SI的转移过程：H是通过在该温度以下的100 k和热辅助过程的隧道限制的中间缺陷中出现的。我们还讨论了噪声光谱的空间选择性，即该方法从细胞最具电阻元件中扩增噪声贡献的趋势。确实，在我们的情况下，这三个术语都与钝化的I-A-SI：H层有关。
We have employed state-of-the-art cross-correlation noise spectroscopy to study carrier dynamics in silicon heterojunction solar cells, complimented by SENTARUS simulations of the same devices. These cells were composed of a light absorbing n-doped crystalline silicon layer contacted by passivating layers of i-a-Si:H and doped a-Si:H electrode layers. The method provided a two-orders-of-magnitude improved sensitivity and allowed to resolution of three additional contributions to noise in addition to 1/f noise. We have observed shot noise with Fano factor close to unity. We have also observed a peculiar generation-recombination term, which presents only under light illumination with energy above 2 eV and thus reflects light absorption and carrier trapping in the a-Si:H layers. A second, low-frequency generation-recombination term was detected at temperatures below 100 K. We argue that it appears because the process of charge carrier transfer across i-a-Si:H occurs via an intermediate defect limited by tunneling above about 100 K and a thermally assisted process below this temperature. We also discuss the spatial selectivity of noise spectroscopy, namely the tendency of the method to amplify noise contributions from the most resistive element of the cell. Indeed, in our case, all three terms are linked to the passivating i-a-Si:H layer.
