论文标题
单层INSB的电特性中的自旋轨道和应变诱导的修饰
Spin-Orbit and Strain Induced Modification in Electrical Properties of Monolayer InSb
论文作者
论文摘要
在这项工作中，研究了使用密度函数理论在双轴菌株存在下单层INSB的电性能。在这里，我们首先探索具有和不带自旋轨道耦合（SOC）考虑的INSB的频带结构。电子和孔有效质量通过SOC考虑修改。电子和孔有效质量分别降低了两次和十次。探索了各种菌株的传导和价带中山谷的位置，并报告了相应的有效质量。通过施加拉伸应变，可以获得较低的电子和孔的有效质量，而带隙的较大拉伸应变均可获得。数字拟合已应用于有效的质量与应变，并报告了每条曲线方程。最后，获得了该材料对不同菌株的工作函数。
In this work, the electrical properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. Here, we first explore the band structure of InSb with and without spin-orbit coupling (SOC) consideration. The electron and hole effective mass modify with SOC consideration. The electron and hole effective masses lowered two and ten times, respectively. The location of valleys in conduction and valence band for various strains are explored, and the corresponding effective masses are reported. A lower effective mass is obtained for both electron and hole with applying tensile strain, whereas, the bandgap closes for large tensile strain. A numeric fitting has applied to effective mass versus strain, and an equation for every curve is reported. Finally, the work function of this material for different strains is obtained.
