论文标题
Spin-1/2中的补偿及其系统学三角形三角形铁磁铁
Compensation and its systematics in spin-1/2 Ising trilayered triangular ferrimagnet
论文作者
论文摘要
三层，ISING，SPIN-1/2，Ferrimagnets是模拟研究的有趣主题，它们显示了补偿效果。目前的工作中，对具有三角形晶格的子层的系统进行了对这种系统的蒙特卡洛研究。组成散装的三层完全由A或B类型的原子形成。类似原子（A-A; B-B）之间的相互作用是铁磁，并且与（A-B）之间的相互作用是抗铁磁。因此，该系统具有三个耦合常数，并表现为两个不同的三层组成：AAB和ABA。 Metropolis单个自旋翻转算法用于临界点的模拟和位置（Sublattice磁性消失，导致零体积磁化）和补偿点（块状磁化消失了，但估计存在非零的Sublattice磁性）。用于补偿点的晶格大小的近距离仿真，并确定了粘合剂的临界点累积交叉技术进行分析，并确定了补偿点存在的条件。还报告了两种构型的临界和补偿温度，在哈密顿参数空间中获得了全面的相图。还提出了临界温度和补偿温度之间的残余磁化和温度间隔降低的反比绝对的替代描述，并与传统的模拟结果进行了比较。这种模拟研究和提议的补偿效应系统学对于为特定技术应用设计材料很有用。
Trilayered, Ising, spin-1/2, ferrimagnets are an interesting subject for simulational studies for they show compensation effect. A Monte Carlo study on such a system with sublayers on triangular lattice is performed in the current work. Three layers, making up the bulk, is formed completely by either A or B type of atoms. The interactions between like atoms (A-A; B-B) are ferromagnetic and between unlike ones (A-B) are anti-ferromagnetic. Thus the system has three coupling constants and manifests into two distinct trilayer compositions: AAB and ABA. Metropolis single spin flip algorithm is employed for the simulation and the location of the critical points (sublattice magnetisations vanish, leading to zero bulk magnetisation) and the compensation points (bulk magnetisation vanishes but nonzero sublattice magnetisations exist) are estimated. Close range simulations with variable lattice sizes for compensation point and Binder's cumulant crossing technique for critical points are employed for analysis and conditions for the existence of compensation points are determined. Comprehensive phase diagrams are obtained in the Hamiltonian parameter space and morphological studies at critical and compensation temperatures for both the configurations are also reported. The alternative description in terms of Inverse absolute of reduced residual magnetisation and Temperature interval between Critical and Compensation temperatures is also proposed and compared with traditional simulational results. Such simulational studies and the proposed systematics of compensation effect are useful in designing materials for specific technological applications.
